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SPP4931 - P-Channel MOSFET

General Description

The SPP4931 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • -20V/-8.5A,RDS(ON)=20mΩ@VGS=-4.5V.
  • -20V/-8.0 A,RDS(ON)=25mΩ@VGS=-2.5V.
  • -20V/-5.0 A,RDS(ON)=35mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOP-8 package design PIN.

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Datasheet Details

Part number SPP4931
Manufacturer SYNC POWER
File Size 466.41 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP4931 Datasheet

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Other Datasheets by SYNC POWER

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPP4931 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4931 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  -20V/-8.5A,RDS(ON)=20mΩ@VGS=-4.5V  -20V/-8.0 A,RDS(ON)=25mΩ@VGS=-2.5V  -20V/-5.0 A,RDS(ON)=35mΩ@VGS=-1.