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SC8252B - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.33 0.03 8252B Date Code 1.33 0.03 BOTTOM VIEW 0.65 G2 S2 G1 S1 0.65 1-pin index mark S1 Mark area 0.210 0.010 0.107 0.007 4 - φ 0.31 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 Unit : mm.

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Datasheet Details

Part number SC8252B
Manufacturer SamHop
File Size 152.66 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SC8252B Datasheet

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Full PDF Text Transcription (Reference)

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SC8252BGreen Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 4.0 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 45.0 @ VGS=4.5V 48.0 @ VGS=4.0V 24V 6A 57.0 @ VGS=3.1V 70.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.33 0.03 8252B Date Code 1.33 0.03 BOTTOM VIEW 0.65 G2 S2 G1 S1 0.65 1-pin index mark S1 Mark area 0.210 0.010 0.107 0.007 4 - φ 0.31 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 Unit : mm ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 24 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±12 6 60 PT Total Power Dissipation a 1.