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SC8232 - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. BOTTOM VIEW 0.65 2.75 0.03 8232 Date Code Mark area 1-pin index mark S1 0.210 0.010 0.107 0.007 S1 S2 G1 G2 S1 S2 0.65 0.65 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 6 - φ 0.31 Unit : mm.

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Datasheet Details

Part number SC8232
Manufacturer SamHop
File Size 93.22 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SC8232 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SC8232 Ver 4.0 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 11.0 @ VGS=4.5V 12.0 @ VGS=4.0V 20V 8A 13.0 @ VGS=3.8V 15.0 @ VGS=3.1V 18.0 @ VGS=2.5V WLCSP TOP VIEW 1.85 0.03 FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. BOTTOM VIEW 0.65 2.75 0.03 8232 Date Code Mark area 1-pin index mark S1 0.210 0.010 0.107 0.007 S1 S2 G1 G2 S1 S2 0.65 0.65 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 6 - φ 0.