SamHop SC8238
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. BOTTOM VIEW 0.65 1.98 㫧 0.02 8238 Date Code G2 S2 G1 S1 0.65 1-pin index mark S1 Mark area 0.13 㫧㩷0.01 S1 : Source 1 G1 : Gate 1 G2 : Gate 2 S2 : Source 2 4 - φ 0.28 Unit : mmABSOLUTE MAXIMUM RATINGS
(TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 20 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±10 8 80 PT Total Power Dissipation a 1.3 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 Units V V A A W °C FET1 Gate 1 FET2 Gate 2 Gate Protect Diode Source 1 Body Diode Source 2 Details are subject to change