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SC8237 - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.98 0.02 8237 Date Code 1.98 0.02 BOTTOM VIEW 0.65 G2 S2 G1 S1 0.65 1-pin index mark S1 Mark area 0.20 0.01 4 - φ 0.31 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 Unit : mm.

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Datasheet Details

Part number SC8237
Manufacturer SamHop
File Size 81.20 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SC8237 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SC8237Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Preliminary PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 9.5 @ VGS=4.5V 10.0 @ VGS=4.0V 16V 9A 11.0 @ VGS=3.1V 12.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.98 0.02 8237 Date Code 1.98 0.02 BOTTOM VIEW 0.65 G2 S2 G1 S1 0.65 1-pin index mark S1 Mark area 0.20 0.01 4 - φ 0.31 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 Unit : mm ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 16 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±10 9 90 PT Total Power Dissipation a 1.