SamHop SC8237
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.98 㫧 0.02 8237 Date Code 1.98 㫧 0.02 BOTTOM VIEW 0.65 G2 S2 G1 S1 0.65 1-pin index mark S1 Mark area 0.20 㫧 0.01 4 - φ 0.31 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 Unit : mmABSOLUTE MAXIMUM RATINGS
(TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 16 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±10 9 90 PT Total Power Dissipation a 1.6 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 Units V V A A W °C FET1 Gate 1 FET2 Gate 2 Gate Protect Diode Source 1 Body Diode Source 2 Details are subject to change without notice. 1