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SC8200 - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. 1.54 0.03 WLCSP TOP VIEW 1.54 0.03 8200 Date Code BOTTOM VIEW 0.65 G2 S2 G1 S1 0.65 1-pin index mark S1 Mark area 0.210 0.010 0.107 0.007 4 - φ 0.31 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 Unit : mm.

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Datasheet Details

Part number SC8200
Manufacturer SamHop
File Size 94.17 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SC8200 Datasheet

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Full PDF Text Transcription (Reference)

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Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SC8200 Ver 3.0 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 32.0 @ VGS=4.5V 33.0 @ VGS=4.0V 20V 6A 38.0 @ VGS=3.1V 42.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. 1.54 0.03 WLCSP TOP VIEW 1.54 0.03 8200 Date Code BOTTOM VIEW 0.65 G2 S2 G1 S1 0.65 1-pin index mark S1 Mark area 0.210 0.010 0.107 0.007 4 - φ 0.31 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 Unit : mm ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 20 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±12 6.0 60 PT Total Power Dissipation a 1.