SamHop SC8230
Dual N-Channel Enhancement Mode Field Effect Transistor
| Part No. | SC8230 |
|---|---|
| Datasheet | SC8230 Download |
| Manufacturer |  SamHop |
| Description | Dual N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.90 㫧 0.03 8230 Date Code 1.90 㫧 0.03 BOTTOM VIEW 0.65 G2 S2 G1 S1 0.65 1-pin index mark S1 Mark area 0.210 㫧 0.010 0.107 㫧 0.007 4 - φ 0.31 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 Unit : mmABSOLUTE MAXIMUM RATINGS
(TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 20 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±12 8 80 PT Total Power Dissipation a 1.6 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 Units V V A A W °C FET1 Gate 1 FET2 Gate 2 Gate Protect Diode Source 1 Body Diode Source 2 Details are subject to change without notice. 1 Sep,04,2015 SC8230 Ver 4.0ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVSSS Source-Source Breakdown Voltage ISSS Zero Gate Voltage Source Current IGSS Gate-Body Leakage Current VGS=0V ,...
