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S DP /B 55N03L
S amHop Microelectronics C orp. S eptember , 2002
N-Channel Logic Level E nhancement Mode Field E ffect Transistor
4
P R ODUC T S UMMAR Y
V DS S
30V
F E AT UR E S
( m W ) TYP
ID
55A
R DS (on)
S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package.
12.5 @ V G S = 10V 20 @ V G S = 4.5V
D
D
G D S
G
S
G
S DP S E R IE S TO-220
S DB S E R IE S TO-263(DD-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed
a
S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG
Limit 30 20 55 140 55 75 0.
SDB55N03L Datasheet
