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Green Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SP8075E
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
3.0 @ VGS=10V 30V 30A
3.8 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
Pin 1
TSON 3.3 x 3.3
D5 D6 D7 D8
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage ID Drain Current-Continuous c
TA=25°C
IDM -Pulsed a c
PD
Maximum Power Dissipation
TA=25°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
4G 3S 2S 1S
Limit 30 ±20 30 90 1.
SP8075E Datasheet
