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SamHop Microelectronics

SP8075E Datasheet Preview

SP8075E Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SP8075E
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
3.0 @ VGS=10V
30V 30A
3.8 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
Pin 1
TSON 3.3 x 3.3
D5
D6
D7
D8
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous c
TA=25°C
IDM -Pulsed a c
PD
Maximum Power Dissipation
TA=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
4G
3S
2S
1S
Limit
30
±20
30
90
1.67
-55 to 150
75
Units
V
V
A
A
W
°C
°C/W
Details are subject to change without notice.
1
Jul,02,2015
www.samhop.com.tw




SamHop Microelectronics

SP8075E Datasheet Preview

SP8075E Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SP8075E
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=10mA
VDS=30V , VGS=0V
VGS= ±20V , VDS=0V
30
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=15A
VGS=4.5V , ID=15A
VDD=15V
ID=15A
VGS=10V
RGEN= 4.7 ohm
VDS=24V,ID=15A,VGS=10V
VDS=24V,ID=15A,
VGS=10V
1.0
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=30A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Mounted on FR4 Board of 1 inch2 , 2oz.
Typ
1.5
3.0
3.8
485
1358
6064
3200
35
8.8
6.5
0.85
Max Units
V
10 uA
±10 uA
2.0 V
3.8 m ohm
5.1 m ohm
ns
ns
ns
ns
nC
nC
nC
1.3 V
Jul,02,2015
2 www.samhop.com.tw


Part Number SP8075E
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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