STB432S Datasheet | SamHop Microelectronics

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. 60A R DS(ON) (m Ω) Max 9 @ VGS=10V 11 @ VGS=4.5V S TB S E R IE S TO-263(DD-P AK) S TP S E R IE S TO-220 ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a Limit 40 ±20 TC=25°C 60 240 130 TC=25°C 62.5 -55 to 150 Units V V A A m J W °C -Pulsed Sigle Pulse Avalanche Energy d Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 2 50 °C/W °C/W Details are subject to change without notice. Jun,24,2008 .samhop..tw .. STB/P432S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250u A VDS=32V , VGS=0V Min 40 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) g FS Drain-Source On-State Resistance VGS= ±20V , VDS=0V 1 ±100 1 1.7 7 9 26 1600 280 150 20 21 45 16 32 15 3.5 7.3 30 0.95 1.3 3 9 11 u A n A V m ohm m ohm S p F p F p F ns ns ns ns n C n C n C n C A V VDS=VGS , ID=250u A VGS=10V , ID=30A VGS=4.5V , ID=28A VDS=10V , ID=30A Forward Transconductance DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS c SWITCHING CHARACTERISTICS t D(ON) Turn-On Delay Time tr Rise Time t D(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge VDS=15V,VGS=0V...