* Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO-252AA(D-PAK) G DS STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Curr
STD30N10 Datasheet (134.37 KB)
STD30N10
SamHop Microelectronics
134.37 KB
N-channel enhancement mode field effect transistor.
STU30N10 Sa mHop Microelectronics C orp. STD30N10Green Product Ver 2.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMM.
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