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SamHop Microelectronics

STF8235A Datasheet Preview

STF8235A Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

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STF8235AGreen
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
20V
ID RDS(ON) (mΩ) Max
6.9 @ VGS=4.5V
7.0 @ VGS=4.0V
11A 7.2 @ VGS=3.7V
7.6 @ VGS=3.1V
8.5 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
G1
S1
S1
PIN 1
D1/D2
(Bottom view)
G2
S2
S2
TDFN 2X5
G1 3
S1 2
S1 1
Bottom Drain Contact
4 G2
5 S2
6 S2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous c
-Pulsed a c
TA=25°C
TA=70°C
PD
Maximum Power Dissipation
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
20
±12
11
8.8
53
1.67
1.07
-55 to 150
75
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jul,08,2015
www.samhop.com.tw




SamHop Microelectronics

STF8235A Datasheet Preview

STF8235A Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STF8235A
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=16V , VGS=0V
VGS= ±12V , VDS=0V
20
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=1.0mA
VGS=4.5V , ID=5.5A
VGS=4.0V , ID=5.5A
VGS=3.7V , ID=5.5A
VGS=3.1V , ID=5.5A
VGS=2.5V , ID=5.5A
VDS=5V , ID=5.5A
VDD=20V
ID=5.5A
VGS=10V
RGEN=6 ohm
VDS=20V,ID=11A,VGS=4.5V
VDS=20V,ID=11A,
VGS=10V
0.5
4.0
4.1
4.2
4.3
4.7
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=11A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Mounted on FR4 Board of 1 inch2 , 2oz.
Typ
0.7
5.3
5.4
5.5
5.7
6.3
34
230
861
3536
2020
26.5
3.5
11
0.81
Max Units
V
1 uA
±10 uA
1.5 V
6.9 m ohm
7.0 m ohm
7.2 m ohm
7.6 m ohm
8.5 m ohm
S
ns
ns
ns
ns
nC
nC
nC
1.2 V
Jul,08,2015
2 www.samhop.com.tw


Part Number STF8235A
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
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