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SamHop Microelectronics

STM4840 Datasheet Preview

STM4840 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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STM4840Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
17 @ VGS=10V
30V 9A
28 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S O-8
1
D5
D6
D7
D8
4G
3S
2S
1S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TA=25°C
TA=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
30
±20
9
7.2
45
38
2.5
1.6
-55 to 150
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Dec,20,2012
www.samhop.com.tw




SamHop Microelectronics

STM4840 Datasheet Preview

STM4840 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

STM4840
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS=0V , ID=250uA
VDS=24V , VGS=0V
VGS= ±20V , VDS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=4.5A
VGS=4.5V , ID=3.4A
VDS=10V , ID=4.5A
VDS=15V,VGS=0V
f=1.0MHz
VDD=15V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=15V,ID=4.5A,VGS=10V
VDS=15V,ID=4.5A,VGS=4.5V
VDS=15V,ID=4.5A,
VGS=10V
30
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=3A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.3mH,VDD = 20V.(See Figure13)
Typ Max Units
1
±100
V
uA
nA
1.8 3 V
14 17 m ohm
21 28 m ohm
16 S
678 pF
119 pF
96 pF
14 ns
15 ns
17 ns
22 ns
10.8 nC
5.5 nC
1.5 nC
3.2 nC
0.82 1.3 V
Dec,20,2012
2 www.samhop.com.tw


Part Number STM4840
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
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