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SamHop Microelectronics

STP438S Datasheet Preview

STP438S Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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STB/P438SGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
9 @ VGS=10V
40V 60A
10 @ VGS=4.5V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
GS
S TB S E R IE S
T O -263(DD-P AK )
G
D
S
S TP S E R IE S
TO-220
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol
Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
40
±20
ID
Drain Current-Continuous a
TA=25°C
TA=70°C
60
50
IDM -Pulsed b
EAS Avalanche Energy c
240
196
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
70
45
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
1.8
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Feb,05,2009
1 www.samhop.com.tw




SamHop Microelectronics

STP438S Datasheet Preview

STP438S Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STB/P438S
Ver1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body leakage current
ON CHARACTERISTICS a
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS
COSS
CRSS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
tr
tD(OFF)
tf
Turn-On DelayTime
Rise Time
Turn-Off DelayTime
Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS=0V , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=20A
VGS=4.5V , ID=12A
VDS=10V , ID=20A
VDS=20V,VGS=0V
f=1.0MHz
VDD=20V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=20V,ID=20A,VGS=10V
VDS=20V,ID=20A,VGS=4.5V
VDS=20V,ID=20A,
VGS=10V
40
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Diode Forward Voltage
VGS=0V,IS=2A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Ctcle <_ 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,VDD=40V, VGS =10V,L=0.5mH.(See Figure13)
Typ Max Units
1
±100
V
A
nA
1.6 3
V
7 9 m ohm
8.5 10 m ohm
28.1 S
1360
248.5
143
pF
pF
pF
24 ns
25 ns
67 ns
32 ns
26 nC
12.5 nC
2.8 nC
6 nC
2
0.74 1.3
A
V
Feb,05,2009
2 www.samhop.com.tw


Part Number STP438S
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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