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SamHop Microelectronics

STT3416 Datasheet Preview

STT3416 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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STT3416Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
30V
ID
7.5A
RDS(ON) (mΩ) Max
29 @ VGS=10V
42 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
G
S
STT SERIES
SOT - 223
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TA=25°C
TA=70°C
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
30
±20
7.5
6.0
50
12
3
1.9
-55 to 150
42
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Dec,07,2016
www.samhop.com.tw




SamHop Microelectronics

STT3416 Datasheet Preview

STT3416 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

STT3416
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=24V , VGS=0V
VGS= ±20V , VDS=0V
30
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=3.8A
VGS=4.5V , ID=3.1A
VDS=5V , ID=3.8A
VDS=15V,VGS=0V
f=1.0MHz
VDD=15V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=15V,ID=3.8A,VGS=10V
VDS=15V,ID=3.8A,
VGS=10V
1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
e.Mounted on FR4 Board of 1 inch2 , 2oz.
Typ
2
23
31
17
300
66
51
9.6
12
16
6
5.5
1
2
0.77
Max Units
1
±100
V
uA
nA
3V
29 m ohm
42 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
Dec,07,2016
2 www.samhop.com.tw


Part Number STT3416
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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