900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SamHop Microelectronics

STU438S Datasheet Preview

STU438S Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STU/D438SGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.4
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
9 @ VGS=10V
40V 50A
11 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
IAS Single Pulse Avalanche Current c
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
40
±20
50
40
147
23
132
42
27
-55 to 175
3
50
Units
V
V
A
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Apr,28,2011
www.samhop.com.tw




SamHop Microelectronics

STU438S Datasheet Preview

STU438S Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STU/D438S
Ver 1.4
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
BVDSS Drain-Source Breakdown Voltage d
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
ON CHARACTERISTICS a
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS=0V , ID=250uA
VGS=0V , ID=10mA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=25A
VGS=4.5V , ID=23A
VDS=5V , ID=25A
VDS=20V,VGS=0V
f=1.0MHz
VDD=20V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=20V,ID=25A,VGS=10V
VDS=20V,ID=25A,VGS=4.5V
VDS=20V,ID=25A,
VGS=10V
40 V
45 V
1 uA
±100 nA
1.5 1.7
3
V
7 9 m ohm
8.5 11 m ohm
60 S
1380
250
155
pF
pF
pF
21 ns
25 ns
66 ns
36 ns
26 nC
12 nC
2.5 nC
6.6 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Diode Forward Voltage a
VGS=0V,IS=6A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
d.Pulse Test:Pulse Width <_ 1us,Duty Cycle <_ 1%.
6
0.78 1.3
A
V
Apr,28,2011
2 www.samhop.com.tw


Part Number STU438S
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
PDF Download

STU438S Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 STU438S N-Channel Enhancement Mode Field Effect Transistor
SamHop Microelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy