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SamHop Microelectronics

STU6025NL Datasheet Preview

STU6025NL Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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S T U/D6025NL
S amHop Microelectronics C orp.
Apr,20 2005 ver1.1
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
www.DataShee3t40UV.com 60A
R DS (ON) ( m W ) Typ
5.5 @ VGS = 10V
8 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S TU S E R IE S
T O -252AA(D-P AK )
GDS
S TD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ Tc=25 C
-P ulsed b
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
S ymbol
VDS
VGS
ID
IDM
IS
PD
Limit
30
20
60
100
20
50
Unit
V
V
A
A
A
W
Operating and S torage Temperature R ange TJ, TS TG
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
3
C /W
Thermal R esistance, Junction-to-Ambient
R JA
50
C /W
1




SamHop Microelectronics

STU6025NL Datasheet Preview

STU6025NL Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

S T U/D6025NL
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min TypC Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
www.DataSGhaetee-t4BUo.dcyomLeakage
ON CHARACTERISTICS b
Gate Threshold Voltage
BVDSS VGS =0V, ID =250uA
30
IDSS VDS =24V, VGS =0V
IGSS VGS = 20V, VDS =0V
V
1 uA
100 nA
VGS(th) VDS =VGS, ID = 250uA 1 1.6 3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID =14A
VGS =4.5V, ID= 10A
5.5 7 m ohm
8 10 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
VDS = 10V, VGS = 10V
VDS = 10V, ID =14A
85
24.5
A
S
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
SWITCHING CHARACTERISTICS c
C IS S
COSS
CRSS
VDS =15V, VGS = 0V
f =1.0MHZ
3270 PF
590 PF
420 PF
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON) VDD = 15V
tr
ID = 1A
VGS = 10V
tD(OFF) R GEN = 6 ohm
37.3 ns
65.6 ns
94.7 ns
Fall Time
tf
44.5 ns
Total Gate Charge
Qg VDS =15V, ID =14A,VGS =10V
VDS =15V, ID =14A,VGS =4.5V
59.6
28.3
nC
nC
Gate-S ource Charge
Gate-Drain Charge
Qgs VDS =15V, ID =14A
Qgd VGS =10V
8.5 nC
12.6 nC
2


Part Number STU6025NL
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
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