Description
The K4D26323RA is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Features
- 2.8V + 5% power supply for device operation.
- 2.8V + 5% power supply for I/O interface.
- SSTL_2 compatible inputs/outputs.
- 4 banks operation.
- MRS cycle with address key programs -. Read latency 3,4 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave).
- Full page burst length for sequential burst type only.
- Start address of the full page burst should be even.
- All inputs except data & DM are sa.
K4D26323RA Datasheet
