K4D551638F-TC datasheet, sdram equivalent, Samsung

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K4D551638F-TC Features and benefits

* 2.6V + 0.1V power supply for device operation
* 2.6V + 0.1V power supply for I/O interface
* SSTL_2 compatible inputs/outputs
* 4 banks operation
* .

K4D551638F-TC Application

- 3 - Rev 1.7 (June 2004) Target Spec K4D551638F-TC PIN CONFIGURATION (Top View) VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 V.

K4D551638F-TC Description

FOR 4M x 16Bit x 4 Bank GDDR SDRAM The K4D551638F is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data S.

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