K4D551638F-TC Datasheet - Samsung

K4D551638F-TC 256Mbit GDDR SDRAM

Target Spec K4D551638F-TC 256M GDDR SDRAM 256Mbit GDDR SDRAM 4M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.7 June 2004 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.7 (June 2004) Target Spec K4D551638F-TC Revision History Revision 1.7 (June 15, 2004) - Target Spec Changed VDD/VDDQ of K4D551638F-TC33 from 2.8V + 0.1V to 2.8V(min)/2.95V(max) 256M GDDR SDRAM Revision 1.6 (March 31, 2004) - Target .

K4D551638F-TC Features

* 2.6V + 0.1V power supply for device operation

* 2.6V + 0.1V power supply for I/O interface

* SSTL_2 compatible inputs/outputs

* 4 banks operation

* MRS cycle with address key programs -. Read latency 3 (clock) -. Burst length (2, 4 and 8) -. Burst type (sequ

K4D551638F-TC Datasheet (206.99 KB)