Download K4D551638H-LC40 Datasheet PDF
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K4D551638H-LC40 Description

FOR 4M x 16Bit x 4 Bank GDDR SDRAM.

K4D551638H-LC40 Key Features

  • 2.35V ~ 2.7V power supply for device operation
  • 2.35V ~ 2.7V power supply for I/O interface
  • SSTL_2 patible inputs/outputs
  • 4 banks operation
  • MRS cycle with address key programs
  • Read latency 2.5, 3 (clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave)
  • All inputs except data & DM are sampled at the positive going edge of the system clock
  • Differential clock input
  • No Write-Interrupted by Read Function
  • 2 DQS’s (1DQS / Byte)

K4D551638H-LC40 Applications

  • Samsung Electronics reserves the right to change products or specification without notice