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K4E171612C Datasheet 1M x 16Bit CMOS Dynamic RAM

Manufacturer: Samsung Semiconductor

Overview: K4E171611C, K4E151611C K4E171612C, K4E151612C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data.

Download the K4E171612C datasheet PDF. This datasheet also includes the K4E171611C variant, as both parts are published together in a single manufacturer document.

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General Description

This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref.

Key Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Selfrefresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

More Datasheets from Samsung Semiconductor

Part Number Description
K4E171612D 1M x 16Bit CMOS Dynamic RAM
K4E171611C 1M x 16Bit CMOS Dynamic RAM
K4E171611D 1M x 16Bit CMOS Dynamic RAM
K4E170411D 4M x 4Bit CMOS Dynamic RAM
K4E170412D 4M x 4Bit CMOS Dynamic RAM
K4E170811D 2M x 8Bit CMOS Dynamic RAM
K4E170812D 2M x 8Bit CMOS Dynamic RAM
K4E151611C 1M x 16Bit CMOS Dynamic RAM
K4E151611D 1M x 16Bit CMOS Dynamic RAM
K4E151612C 1M x 16Bit CMOS Dynamic RAM