K4M51323LE-M datasheet, 90fbga equivalent, Samsung

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Features and benefits

* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3.

Application

ORDERING INFORMATION Part No. K4M51323LE-M(E)C/L/F80 K4M51323LE-M(E)C/L/F1H K4M51323LE-M(E)C/L/F1L Max Freq. 125MHz(CL.

Description

The K4M51323LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .

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