K9G4G08U0A Overview
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K9G4G08U0A Key Features
- Voltage Supply
- 2.7V Device(K9G4G08B0A) : 2.5V ~ 2.9V
- 3.3V Device(K9G4G08U0A) : 2.7V ~ 3.6V
- Organization
- Memory Cell Array : (512M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (256K + 8K)Byte
- Page Read Operation
K9G4G08U0A Applications
- Samsung Electronics reserves the right to change products or specification without notice