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K9G8G08B0A - FLASH MEMORY

This page provides the datasheet information for the K9G8G08B0A, a member of the K9G8G08U0A FLASH MEMORY family.

Description

Offered in 1Gx8bit, the K9G8G08X0A is a 8G-bit NAND Flash Memory with spare 256M-bit.

The device is offered in 2.7V and 3.3V Vcc.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Features

  • Voltage Supply - 2.7V Device(K9G8G08B0A) : 2.5V ~ 2.9V - 3.3V Device(K9G8G08U0A) : 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max. ) - Serial Access : 25ns(Min. ).
  • Memory Cell : 2bit / Memory Cell.
  • Fast Write Cycle Time - Progra.

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Datasheet preview – K9G8G08B0A

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Full PDF Text Transcription

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K9LAG08U1A K9G8G08U0A K9G8G08B0A Preliminary FLASH MEMORY K9XXG08XXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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