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  Samsung Electronic Components Datasheet  

KM616FR1000 Datasheet

64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM

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KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM
Document Title
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revise
- Erase 100ns part from KM616FS1000 Family
- Add 150ns part on KM616FS1000 Family
- Add 32-sTSOP1 new package
- Add high power version
ISB1=5.0µA(Max)
- Change VDR(Min) 1.0 to 1.5V
1.0 Finalize
- Concept change high power version to low low power version
ISB1=5.0µA(Max)
- Change super low power version with special handling
ISB1=1.0µA(Max)
- Reduce Icc & Icc1
Read : 15mA to 10mA
Write : 25mA to 20mA
2.0 Revise
- Change datasheet format
- Erase reverse type package
Draft Date
March 15, 1996
June 3, 1996
Remark
Advance
Preliminary
December 1, 1996 Final
February 26, 1998 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 2.0
February 1998


  Samsung Electronic Components Datasheet  

KM616FR1000 Datasheet

64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM

No Preview Available !

KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM
64Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
Process Technology : Full CMOS
Organization : 64Kx16 bit
Power Supply Voltage
KM616FV1000 Family : 3.0V ~ 3.6V
KM616FS1000 Family : 2.3V ~ 3.3V
KM616FR1000 Family : 1.8V ~ 2.7V
Low Data Retention Voltage : 1.5V(Min)
Three state output status and TTL Compatible
Package Type : 44-TSOP2-400F
GENERAL DESCRIPTION
The KM616FV1000, KM616FS1000 and KM616FR1000
families are fabricated by SAMSUNGs advanced Full
CMOS process technology. The families support various
operating temperature ranges for user flexibility of system
design. The families also support low data retention voltage
for battery back-up operation with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
KM616FV1000
3.0~3.6V
KM616FS1000 Commercial(0~70°C) 2.3~3.3V
KM616FR1000
KM616FV1000I
KM616FS1000I
Industrial(-40~85°C)
1.8~2.7V
3.0~3.6V
2.3~3.3V
KM616FR1000I
1.8~2.7V
1. The parameter is measured with 30pF test load.
2. Super low power product=1µA with special handling.
PIN DESCRIPTION
Speed(ns)
701)/85@VCC=3.3±0.3V
701)/85@VCC=3.0±0.3V
1201)/150@VCC=2.5±0.2V
3001)@VCC=2.0±0.2V
701)/85@VCC=3.3±0.3V
701)/85@VCC=3.0±0.3V
1201)/150@VCC=2.5±0.2V
3001)@VCC=2.0±0.2V
Power Dissipation
Standby
(ISB1, Max)
Operating
(ICC2, Max)
80mA
80mA
50mA
5µA2)
20mA
80mA
80mA
50mA
20mA
FUNCTIONAL BLOCK DIAGRAM
PKG Type
44-TSOP2
Forward
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44-TSOP2
Forward
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
N.C
Name
Function
CS Chip Select Input
OE Output Enable Input
WE Write Enable Input
A0~A15 Address Inputs
I/O1~I/O16 Data Inputs/Outputs
Name
Function
LB Lower Byte(I/O1~8)
UB Upper Byte(I/O9~16)
Vcc Power
Vss Ground
N.C. No Connection
A7
A6
A5
A4
A3
A2
A1
A0
A15
A14
I/O1~I/O8
I/O9~I/O16
Clk gen.
Row
select
Data
cont
Data
cont
Data
cont
Precharge circuit.
Memory array
1024 rows
64×16 columns
Vcc
Vss
I/O Circuit
Column select
A10 A13 A12 A11 A9 A8
WE
OE Control
UB logic
LB
CS
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2 Revision 2.0
February 1998


Part Number KM616FR1000
Description 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM
Maker Samsung
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