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KM684000B - 512Kx8 bit Low Power CMOS Static RAM

General Description

The KM684000B families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support various operating temperature ranges and various package types for user flexibility of system design.

Key Features

  • Process Technology: TFT.
  • Organization: 512Kx8.
  • Power Supply Voltage: 4.5~5.5V.
  • Low Data Retention Voltage: 2V(Min).
  • Three state output and TTL Compatible.
  • Package Type: 32-DIP-600, 32-SOP-525 32-TSOP2-400F/R CMOS SRAM.

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📁 Similar Datasheet

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Other Datasheets by Samsung Semiconductor

Part Number Description
KM684000 524288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
KM684000C 512Kx8 bit Low Power CMOS Static RAM
KM684000L 512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM
KM684002 512Kx8 Bit High Speed Static RAM(5V Operating) / Revolutionary Pin out
KM684002A 512Kx8 Bit High Speed Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KM684000B Family Document Title 512Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial Draft Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA Finalize - Changed Operating current ICC1 at write : 45mA → 40mA ICC2; 90mA → 80mA - Change test load at 55ns : 100pF → 50pF Revise - Change datasheet format Revise - Industrial product speed bin change:70/100ns → 55/70ns Draft Date December 7, 1996 March 6, 1997 Remark Advance Preliminary 1.0 October 9, 1997 Final 2.0 February 17, 1998 Final 3.0 September 8, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products.