KM684000B Datasheet | Samsung Semiconductor

KM684000B Family Document Title 512Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial Draft Revise - Changed Operating current by reticle revision ICC at write : 35m A → 45m A ICC1 at read/write : 15/35m A → 10/45m A Finalize - Changed Operating current ICC1 at write : 45m A → 40m A ICC2; 90m A → 80m A - Change test load at 55ns : 100p F → 50p F Revise - Change datasheet format Revise - Industrial product speed bin change:70/100ns → 55/70ns Draft Date December 7, 1996 March 6, 1997 Remark Advance Preliminary October 9, 1997 Final February 17, 1998 Final September 8, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. Revision 3.0 September 1998 KM684000B Family 512Kx8 bit Low Power CMOS Static RAM Features - Process Technology:...