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K3N4C1000D-TC - 8M-Bit CMOS Mask ROM

Description

The K3N4C1000D-TC(E) is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with a 5V single

Features

  • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode).
  • Fast access time : 100ns(Max. ).
  • Supply voltage : single +5V.
  • Current consumption Operating : 50mA(Max. ) Standby : 50µA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package -. K3N4C1000D-TC(E) : 44-TSOP2-400 CMOS MASK ROM.

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Datasheet Details

Part number K3N4C1000D-TC
Manufacturer Samsung Electronics
File Size 59.85 KB
Description 8M-Bit CMOS Mask ROM
Datasheet download datasheet K3N4C1000D-TC Datasheet

Full PDF Text Transcription (Reference)

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K3N4C1000D-TC(E) 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -. K3N4C1000D-TC(E) : 44-TSOP2-400 CMOS MASK ROM GENERAL DESCRIPTION The K3N4C1000D-TC(E) is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with a 5V single power supply, and all inputs and outputs are TTL compatible.
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