K4S561632H - 256Mb H-Die SDRAM

Product Overview

Samsung Electronics

Datasheet Details

Part number	K4S561632H
Manufacturer	Samsung Electronics
File Size	424.28 KB
Description	256Mb H-Die SDRAM
Datasheet	K4S561632H Datasheet
Additional preview pages of the K4S561632H datasheet.

Product details

Description

The K4S560432H / K4S560832H / K4S561632H is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x4,x8) & L(U)DQM (x16) for masking.
Auto & self refresh.
64ms.

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Published: Aug 19, 2006 |