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KM432D2131 Datasheet 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM

Manufacturer: Samsung Semiconductor

Overview: www.DataSheet4U.net KM432D2131 Target 64M DDR SGRAM 64Mbit DDR SGRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous Graphic RAM with Bi-directional Data Strobe Revision 0.3 May 1999 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 0.3 (May. 1999) KM432D2131 Revision History Revision 0.3 (May 1999) • Corrected tRDL related typo. Target 64M DDR SGRAM Revision 0.0 (December 1998) - Target Spec • Defined Target Specification - 2 - Rev. 0.3 (May.

Download the KM432D2131 datasheet PDF. This datasheet also includes the KM432D2131TQ variant, as both parts are published together in a single manufacturer document.

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General Description

FOR 512K x 32Bit x 4 Bank DDR SGRAM The KM432D2131 is 67,10

Key Features

  • 3.3V ±5% power supply for device operation.
  • 2.5V ±5% power supply for I/O interface.
  • SSTL_2 compatible inputs/outputs.
  • 4 banks operation.
  • MRS cycle with address key programs -. Read latency 2, 3 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave).
  • Full page burst length for sequential burst type only.
  • Start address of the full page burst should be even.
  • All inputs except data & DM are sam.

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