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KM641001BL - CMOS SRAM

Download the KM641001BL datasheet PDF. This datasheet also covers the KM641001B variant, as both devices belong to the same cmos sram family and are provided as variant models within a single manufacturer datasheet.

Description

The KM641001B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits.

The KM641001B/BL uses 4 common input and output lines and has at output enable pin which operates faster than address access time at read cycle.

Features

  • Fast Access Time 15, 20ns(Max. ).
  • Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 5mA(Max. ) 1mA(Max) L-Ver. Only Operating KM641001B/BL - 15 : 120mA(Max. ) KM641001B/BL - 20 : 118mA(Max. ).
  • Single 5.0V±10% Power Supply.
  • TTL Compatible Inputs and Outputs.
  • Fully Static Operation - No Clock or Refresh required.
  • Three State Outputs.
  • 2V Minimum Data Retention ; L-Ver. only.
  • Standard Pin Configuration KM641001B/BLJ : 28-SO.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KM641001B_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
KM644002 1M X 4 Bit (with Oe) high-speed CMOS Static RAM Samsung
KM644002L 1M X 4 Bit (with Oe) high-speed CMOS Static RAM Samsung
KM6161000B 64K X 16-Bit Low Power CMOS Static RAM Samsung Electronics
KM6161002A CMOS SRAM Samsung
KM6161002B CMOS SRAM Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
KM641001B CMOS SRAM
KM641001A CMOS SRAM
KM641003A CMOS SRAM
KM641003B CMOS SRAM
KM641003C CMOS SRAM

Full PDF Text Transcription

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www.DataSheet4U.com PRELIMINARY CMOS SRAM KM641001B/BL Document Title 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. Rev. 0.0 Rev.1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1.1. Replace Design Target to Preliminary. Release to Final Data Sheet. 2.1. Delete Preliminary. 2.2. Delete 17ns, L-version and Industrial Temperature Part. 2.3. Delete VOH1=3.95V. 2.4. Delete Data Retention Characteristics and Wave form. 2.5. Relex operating current. Speed Previous Now 15ns 120mA 120mA 17ns 110mA 20ns 100mA 118mA 3.1. Add Low power Version. 3.2. Add Data Retention chcracteristics. Draft Data Feb. 1st 1997 Jun. 1st 1997 Remark Design Target Preliminary Rev. 2.0 Feb. 6th 1998 Final Rev.3.0 Jul.
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