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KM68V257E - 32K X 8 Bit High Speed CMOS Static RAM

Description

The KM68V257E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits.

The KM68V257E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.

Features

  • Fast Access Time 12,15,20ns(Max. ).
  • Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 2.0mA(Max. ) 0.5mA(Max. ) L-ver. only Operating KM68V257E - 12 : 70mA(Max. ) KM68V257E - 15 : 70mA(Max. ) KM68V257E - 20 : 70mA(Max. ).
  • Single 3.3 ±0.3V Power Supply.
  • TTL Compatible Inputs and Outputs.
  • Fully Static Operation - No Clock or Refresh required.
  • Three State Outputs.
  • Standard Pin Configuration KM68V257EJ : 28-SOJ-300 KM68V257ETG : 28-TS.

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Datasheet preview – KM68V257E

Datasheet Details

Part number KM68V257E
Manufacturer Samsung Semiconductor
File Size 155.79 KB
Description 32K X 8 Bit High Speed CMOS Static RAM
Datasheet download datasheet KM68V257E Datasheet
Additional preview pages of the KM68V257E datasheet.
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Full PDF Text Transcription

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w w . U 4 CMOS Static RAM (3.3V Operating) 32Kx8 Bit High-Speed t Operated at Commercial and Industrial Temperature Range. e e h Revision History S a t a D . w Document Title Rev. No. History Rev. 0.0 Rev. 1.0 Initial Draft Release to Final Data Sheet 1. Delete Preliminary 2. Delete Data Retention 3. Relex Standby current Item Previous Isb1 0.3mA Current 0.5mA 2mA Remark L-ver. Normal KM68V257E/EL, KM68V257EI/ELI m o c CMOS SRAM Draft Data Aug. 1. 1998 Sep. 7. 1998 Remark Preliminary Final w w w .D t a S a e h t e U 4 .c m o The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.
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