KM681001B Datasheet - Samsung semiconductor

KM681001B 128K x 8 Bit High-Speed CMOS Static RAM

The KM681001B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The KM681001B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using Samsung′s advance.

PRELIMINARY KM681001B Document Title 128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out. Operated at Commercial and Industrial Temperature Range. CMOS SRAM Revision History Rev . No. Rev. 0.0 Rev. 1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1. Replace Design Target to Preliminary. Release to Final Data Sheet. 1. Delete Preliminary. 2. Delete 17ns, L-version and Industrial Temperature Part. 3. Delete Voh1=3.95V. 4. Delete Data Retention C.

KM681001B Features

* Fast Access Time 15, 20ns(Max.)

* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating KM681001B - 15 : 125mA(Max.) KM681001B - 20 : 123mA(Max.)

* Single 5.0V±10% Power Supply

* TTL Compatible Inputs and Outputs

* Fully Static Operat

KM681001B_Samsungsemiconductor.pdf