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M53230804BT0-C - (M53230804BT0-C/BY0) DRAM Module

General Description

The Samsung M53230804BY0/BT0-C is a 8Mx32bits Dynamic RAM high density memory module.

The Samsung M53230804BY0/BT0-C consists of four CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate.

Key Features

  • Part Identification - M53230804BY0-C(4K cycles/64ms Ref, TSOP, Solder) - M53230804BT0-C(4K cycles/64ms Ref, TSOP, Gold).
  • Extended Data Out Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1000mil), double sided component.

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Other Datasheets by Samsung Semiconductor

Part Number Description
M53230804BY0 (M53230804BT0-C/BY0) DRAM Module
M53230804CT0-C (M53230804CT0-C/CY0) DRAM Module
M53230804CY0 (M53230804CT0-C/CY0) DRAM Module
M53230800CB0 (M532308x0CB0/CW0) DRAM Module
M53230800CW0 (M532308x0CB0/CW0) DRAM Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DRAM MODULE M53230804BY0/BT0-C 4Byte 8Mx32 SIMM PDpin(4Mx16 base) DataSheet4U.com DataShee Revision 0.1 June 1998 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DRAM MODULE Revision History Version 0.0 (Sept. 1997) M53230804BY0/BT0-C • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. • Changed the parameter tCAC(access time from CAS) from 13ns to 15ns @ -5 in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module. et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4 U .com www.DataSheet4U.