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M53230804CY0

Manufacturer: Samsung Semiconductor

M53230804CY0 datasheet by Samsung Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

M53230804CY0 datasheet preview

M53230804CY0 Datasheet Details

Part number M53230804CY0
Datasheet M53230804CY0 M53230804CT0-C Datasheet (PDF)
File Size 543.60 KB
Manufacturer Samsung Semiconductor
Description (M53230804CT0-C/CY0) DRAM Module
M53230804CY0 page 2 M53230804CY0 page 3

M53230804CY0 Overview

The Samsung M53230804CY0/CT0-C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M53230804CY0/CT0-C consists of four CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

M53230804CY0 Key Features

  • Part Identification
  • M53230804CY0-C(4K cycles/64ms Ref, TSOP, Solder)
  • M53230804CT0-C(4K cycles/64ms Ref, TSOP, Gold)
  • Extended Data Out Mode Operation
  • CAS-before-RAS & Hidden Refresh capability
  • RAS-only refresh capability
  • TTL patible inputs and outputs
  • Single +5V±10% power supply
  • JEDEC standard PDpin & pinout
  • PCB : Height(1000mil), double sided ponent
Samsung Semiconductor logo - Manufacturer

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