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M53230804BT0-C

Manufacturer: Samsung Semiconductor

M53230804BT0-C datasheet by Samsung Semiconductor.

M53230804BT0-C datasheet preview

M53230804BT0-C Datasheet Details

Part number M53230804BT0-C
Datasheet M53230804BT0-C_SamsungSemiconductor.pdf
File Size 543.58 KB
Manufacturer Samsung Semiconductor
Description (M53230804BT0-C/BY0) DRAM Module
M53230804BT0-C page 2 M53230804BT0-C page 3

M53230804BT0-C Overview

The Samsung M53230804BY0/BT0-C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M53230804BY0/BT0-C consists of four CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

M53230804BT0-C Key Features

  • Part Identification
  • M53230804BY0-C(4K cycles/64ms Ref, TSOP, Solder)
  • M53230804BT0-C(4K cycles/64ms Ref, TSOP, Gold)
  • Extended Data Out Mode Operation
  • CAS-before-RAS & Hidden Refresh capability
  • RAS-only refresh capability
  • TTL patible inputs and outputs
  • Single +5V±10% power supply
  • JEDEC standard PDpin & pinout
  • PCB : Height(1000mil), double sided ponent
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