M53230804BY0 - (M53230804BT0-C/BY0) DRAM Module

This page provides the datasheet information for the M53230804BY0, a member of the M53230804BT0-C (M53230804BT0-C/BY0) DRAM Module family.

Product Overview

Samsung Semiconductor

Part number	M53230804BY0
Manufacturer	Samsung Semiconductor
File Size	543.58 KB
Description	(M53230804BT0-C/BY0) DRAM Module
Datasheet	M53230804BY0 Datasheet
Additional preview pages of the M53230804BY0 datasheet.

The Samsung M53230804BY0/BT0-C is a 8Mx32bits Dynamic RAM high density memory module.

The Samsung M53230804BY0/BT0-C consists of four CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate.

Part Identification - M53230804BY0-C(4K cycles/64ms Ref, TSOP, Solder) - M53230804BT0-C(4K cycles/64ms Ref, TSOP, Gold).
Extended Data Out Mode Operation.
CAS-before-RAS & Hidden Refresh capability.
RAS-only refresh capability.
TTL compatible inputs and outputs.
Single +5V±10% power supply.
JEDEC standard PDpin & pinout.
PCB : Height(1000mil), double sided component.

Other Datasheets by Samsung Semiconductor

M53230804BT0-C - (M53230804BT0-C/BY0) DRAM Module
M53230804CT0-C - (M53230804CT0-C/CY0) DRAM Module
M53230804CY0 - (M53230804CT0-C/CY0) DRAM Module
M53230800CB0 - (M532308x0CB0/CW0) DRAM Module
M53230800CW0 - (M532308x0CB0/CW0) DRAM Module
M53230800DB0 - (M532308x0DB0/DW0) DRAM Module
M53230800DW0 - (M532308x0DB0/DW0) DRAM Module
M53230810CB0 - (M532308x0CB0/CW0) DRAM Module

Published: Sep 3, 2006 |