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K4C89093AF Datasheet

288Mb x18 Network-DRAM2 Specification

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K4C89183AF
288Mb x18 Network-DRAM2 Specification
Version 0.7
- 1 - REV. 0.7 Jan. 2005


  Samsung Electronic Components Datasheet  

K4C89093AF Datasheet

288Mb x18 Network-DRAM2 Specification

No Preview Available !

K4C89183AF
Revision History
Version 0.0 (Oct. 2002)
- First Release
Version 0.01 (Nov. 2002)
- Changed die revision from D-die to F-die
- Corrected typo
- Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.
Version 0.1 (Apr. 2003)
- Added 800Mbps(400Mhz) product
- Changed operating temperature from Ta to Tc.
- Changed capacitance of ADDR/CMD/CLK
Addr/CMD/CLK
From
Min Max
1.5 2.5
To
Min Max
1.5 3.0
- Changed tDSS(DS input Falling Edge to Clock Setup Time)
From
To
F6 FB F5 G7 F6 FB F5
CL4 0.9 0.9 1.0 0.75 0.75 0.8 1.0
CL5 0.9 0.9 1.0 0.75 0.75 0.8 1.0
CL6 0.9 0.9 1.0 0.75 0.75 0.8 1.0
CL7 - - - 0.75 - - -
- Added CL7 for 800Mbps
- Deleted TSOP package outline
Version 0.11 (Apr. 2003)
- Corrected typo in page 3.(Deleted bi-directional strobe)
- Corrected min. Vref to VDDQ/2x95% in page 7
Version 0.2 (Aug. 2003)
- Added package physical dimension
- Extracted 800Mbps(G7) binning from target spec ( G7 will be added in the future)
- Changed DC test condition
From
IDD1S,IDD2N,IDD2P,IDD5,IDD6
-
To
IDD1S,IDD2N,IDD2P,IDD5B,IDD6
IDD4W, IDD4R
- Changed low frequency spec like below
Changed point
Changed condition
newly inserted
From
Unit : ns
F6 FB F5
tCK max@CL=4 7.5 7.5 7.5
tCK max@CL=5 7.5 7.5 7.5
tCK max@CL=6 7.5 7.5 7.5
F6
6.0
6.0
6.0
- Changed AC test load picture
Version 0.3 (Nov. 2003)
- Changed Packge type from die-exposed to full molded
- Changed Package code in Partnumber
To
FB
6.0
6.0
6.0
-2-
F5
6.0
6.0
6.0
REV. 0.7 Jan. 2005


Part Number K4C89093AF
Description 288Mb x18 Network-DRAM2 Specification
Maker Samsung semiconductor
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