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K4S511632B-TCL75 Datasheet, Samsung semiconductor

K4S511632B-TCL75 Datasheet, Samsung semiconductor

K4S511632B-TCL75

datasheet Download (Size : 149.53KB)

K4S511632B-TCL75 Datasheet

K4S511632B-TCL75 specification equivalent, 512mb b-die sdram specification.

K4S511632B-TCL75

datasheet Download (Size : 149.53KB)

K4S511632B-TCL75 Datasheet

Features and benefits


* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency.

Application

Ordering Information Part No. K4S510432B-TC(L)75 K4S510832B-TC(L)75 K4S511632B-TC(L)75 Orgainization 128Mb x 4 (CL=3) .

Description

The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performa.

Image gallery

K4S511632B-TCL75 Page 1 K4S511632B-TCL75 Page 2 K4S511632B-TCL75 Page 3

TAGS

K4S511632B-TCL75
512Mb
B-die
SDRAM
Specification
Samsung semiconductor

Manufacturer


Samsung semiconductor

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