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K4S51163PF-F1L Datasheet - Samsung semiconductor

K4S51163PF-F1L 8M x 16Bit x 4 Banks Mobile-SDRAM

The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4S51163PF-F1L Features

* 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle with address key programs.

* All inputs

K4S51163PF-F1L_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K4S51163PF-F1L

Manufacturer:

Samsung semiconductor

File Size:

114.14 KB

Description:

8m x 16bit x 4 banks mobile-sdram.

K4S51163PF-F1L Distributor

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Stock and price

Distributor
Rochester Electronics LLC
KST64MTF
21145 In Stock
Qty : 5453 units
Unit Price : $0.06