Mobile-SDRAM Datasheet | Pinout, Features, Price Comparison & PDF

K4S641633H-R (Samsung semiconductor)

1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S641633H - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed add

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IS43LR16320B (ISSI)

8M x 16Bits x 4Banks Mobile DDR SDRAM

IS43LR16320B, IS46LR16320B 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320B is a 536,870,912 bits CMOS Mobile Double Data Rate

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K4M641633K (Samsung semiconductor)

1M x 16Bit x 4 Banks Mobile SDRAM

www.DataSheet4U.com K4M641633K - R(B)N/G/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible wit

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K4M51323LC-F (Samsung semiconductor)

Mobile-SDRAM

K4M51323LC - S(D)N/G/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible with multiplexed address. • F

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K4S64163LH-RBF (Samsung semiconductor)

1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S64163LH - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. •

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K4S641633H-L (Samsung semiconductor)

1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S641633H - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed add

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K4M28163PF-R (Samsung)

2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M28163PF - R(B)G/F 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba

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K4M563233D (Samsung)

8Mx32 Mobile SDRAM 90FBGA

K4M563233D-M(E)E/N/I/P CMOS SDRAM 8Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.1 December 2002 Rev. 1.1 Dec. 2002 K4M56

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K4S64163LH-RBL (Samsung semiconductor)

1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S64163LH - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. •

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H55S1222EFP-60E (Hynix Semiconductor)

128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O

www.DataSheet4U.com 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O Specification of 128M (4Mx32bit) Mobile SDRAM Memory Cell Array - Organiz

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KMS5U000KM-B308 (Samsung)

4Gb DDP(64M x 32 + 64M x 32) Mobile DDR SDRAM

Rev. 1.0, May. 2012 KMS5U000KM-B308 MCP Specification 4GB e·MMC + 4Gb DDP(64M x32+ 64Mx32) Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE

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K4S561633F-F1L (Samsung semiconductor)

4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

K4S561633F - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed addr

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K4M511533E-L (Samsung)

Mobile-SDRAM

K4M511533E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address.

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K4M56163PE-R (Samsung)

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M56163PE - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba

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K4M56323LE (Samsung semiconductor)

2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

www.DataSheet4U.com K4M56323LE - M(E)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 2.5V power supply. • LVCMOS compatible with m

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K4M51323LC-SDN (Samsung semiconductor)

Mobile-SDRAM

K4M51323LC - S(D)N/G/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible with multiplexed address. • F

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K4S643233F-SDN (Samsung semiconductor)

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

www.DataSheet4U.com K4S643233F-S(D)E/N/I/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.5 December 2002 Rev.

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K4S643233F-SDI (Samsung semiconductor)

2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

www.DataSheet4U.com K4S643233F-S(D)E/N/I/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.5 December 2002 Rev.

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K4S56323LF-FL (Samsung semiconductor)

2M x 32Bit x 4 Banks Mobile SDRAM

K4S56323LF - F(H)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible with multiplexed address.

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K4S64163LH-RN (Samsung semiconductor)

1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4S64163LH - R(B)E/N/G/C/L/F 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. •

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