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K4S643233F-SDI Datasheet - Samsung semiconductor

K4S643233F-SDI 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock c.

K4S643233F-SDI Features

* 3.0V & 3.3 power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled

K4S643233F-SDI Datasheet (90.62 KB)

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Datasheet Details

Part number:

K4S643233F-SDI

Manufacturer:

Samsung semiconductor

File Size:

90.62 KB

Description:

2mx32 mobile sdram 90fbga cmos sdram.

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K4S643233F-SDI 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM Samsung semiconductor

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