K4S643233F-SN - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock.
I/O transactions are possible on every clock c
K4S643233F-SN Features
* 3.0V & 3.3 power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled