K4M563233D Datasheet PDF - Samsung 8Mx32 Mobile SDRAM 90FBGA Specs

K4M563233D - 8Mx32 Mobile SDRAM 90FBGA

Datasheet Summary

Description

The K4M283233D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (1, 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (4K cycle).

Datasheet Details

Part number	K4M563233D
Manufacturer	Samsung
File Size	65.02 KB
Description	8Mx32 Mobile SDRAM 90FBGA
Datasheet	K4M563233D Datasheet
Additional preview pages of the K4M563233D datasheet.

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Full PDF Text Transcription

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K4M563233D-M(E)E/N/I/P CMOS SDRAM 8Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.1 December 2002 Rev. 1.1 Dec. 2002 K4M563233D-M(E)E/N/I/P 2M x 32Bit x 4 Banks SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply • LVCMOS compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (1, 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock • Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (4K cycle). • Extended Temperature Operation (-25 °C ~ 85° C). • Inderstrial Temperature Operation (-40 °C ~ 85 ° C). • 90Balls DDP FBGA(-MXXX -Pb, -EXXX -Pb Free).

Published: Apr 25, 2005 |