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K4M563233D

8Mx32 Mobile SDRAM 90FBGA

K4M563233D Features

* 3.0V & 3.3V power supply

* LVCMOS compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (1, 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are sam

K4M563233D General Description

The K4M283233D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4M563233D Datasheet (65.02 KB)

Preview of K4M563233D PDF

Datasheet Details

Part number:

K4M563233D

Manufacturer:

Samsung

File Size:

65.02 KB

Description:

8mx32 mobile sdram 90fbga.
K4M563233D-M(E)E/N/I/P CMOS SDRAM 8Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.1 December 2002 Rev. 1.1 Dec. 2002 K4M56.

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K4M563233D 8Mx32 Mobile SDRAM 90FBGA Samsung

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