K4M563233D 8Mx32 Mobile SDRAM 90FBGA

Samsung

Description

K4M563233D-M(E)E/N/I/P CMOS SDRAM 8Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.1 December 2002 Rev.1.1 Dec.2002 K4M56.
The K4M283233D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG′s high.

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Datasheet Specifications

Part number: K4M563233D
Manufacturer: Samsung
File Size: 65.02 KB
Datasheet: K4M563233D_Samsungsemiconductor.pdf
Description: 8Mx32 Mobile SDRAM 90FBGA

Features

* 3.0V & 3.3V power supply
* LVCMOS compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (1, 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are sam

Applications

* ORDERING INFORMATION Part No. Max Freq. Interface Package 90 FBGA Pb (Pb Free) 125MHz(CL=3) K4M563233D-M(E)E/N/I/P80 105MHz(CL=2) K4M563233D-M(E)E/N/I/P1H 105MHz(CL=2) LVCMOS K4M563233D-M(E)E/N/I/P1L 105MHz(CL=3)
* 1 - M(E)E/N ; Normal/Low Power, Temp : -25°C ~ 85° C. - M(E)I/P ; Noraml/Low Pow

K4M563233D Distributors

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K4M563233D 8Mx32 Mobile SDRAM 90FBGA Samsung

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