K4M56323PG-FE, K4M56323PG-F Datasheet - Samsung semiconductor

K4M56323PG-FE, K4M56323PG-F, 2M x 32Bit x 4 Banks Mobile SDRAM

K4M56323PG-F(H)E/G/C/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4M56323PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high.

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K4M56323PG-F_Samsungsemiconductor.pdf

K4M56323PG-FE Datasheet Preview — This datasheet PDF includes multiple part numbers: K4M56323PG-FE, K4M56323PG-F. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K4M56323PG-FE, K4M56323PG-F

Manufacturer:

Samsung semiconductor

File Size:

184.11 KB

Description:

2M x 32Bit x 4 Banks Mobile SDRAM

Note:

This datasheet PDF includes multiple part numbers: K4M56323PG-FE, K4M56323PG-F.
Please refer to the document for exact specifications by model.

Features

* 1.8V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad

Applications

* ORDERING INFORMATION Part No. K4M56323PG-F(H)E/G/C/F75 K4M56323PG-F(H)E/G/C/F90 Max Freq. 133MHz(CL=3), 83MHz(CL2) 111MHz(CL=3), 83MHz(CL2) LVCMOS 90 FBGA Pb (Pb Free) Interface Package K4M56323PG-F(H)E/G/C/F1L 111MHz(CL=3)
* 1, 66MHz(CL2) www. DataSheet4U. com - F(H)E/G : Normal/ Low Power, Exte

K4M56323PG-FE Distributors

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K4M56323PG-F 32Bit Banks Mobile SDRAM Samsung semiconductor

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