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K4M56163PE-RG

4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M56163PE-RG Features

* 1.8V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle with ad

K4M56163PE-RG General Description

The K4M56163PE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design make a device controlled precisely with the use of system clock and I/O transactions are possible on e.

K4M56163PE-RG Datasheet (112.60 KB)

Preview of K4M56163PE-RG PDF

Datasheet Details

Part number:

K4M56163PE-RG

Manufacturer:

Samsung

File Size:

112.60 KB

Description:

4m x 16bit x 4 banks mobile sdram in 54fbga.

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K4M56163PE-RG 16Bit Banks Mobile SDRAM 54FBGA Samsung

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