K4M56323LE 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Samsung semiconductor

Description

www.DataSheet4U.com K4M56323LE - M(E)E/N/S/C/L/R 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4M56323LE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high.

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Datasheet Specifications

Part number: K4M56323LE
Manufacturer: Samsung semiconductor
File Size: 364.82 KB
Datasheet: K4M56323LE_Samsungsemiconductor.pdf
Description: 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Features

* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad

Applications

* DataShee ORDERING INFORMATION Part No. K4M56323LE-M(E)E/N/S/C/L/R80 K4M56323LE-M(E)E/N/S/C/L/R1H K4M56323LE-M(E)E/N/S/C/L/R1L DataSheet4U. com Max Freq. 125MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)
* 1 LVCMOS 90 FBGA Leaded (Lead Free) Interface Package - M(E)E/N/S : Normal / Low / Super Low Power,

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K4M56323LE 32Bit Banks Mobile SDRAM 90FBGA Samsung semiconductor

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