K4M56323LE Datasheet, 90fbga, Samsung semiconductor

K4M56323LE Features

• 90fbga
• 2.5V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1, 2 &

PDF File Details

Part number:

K4M56323LE

Manufacturer:

Samsung semiconductor

File Size:

364.82kb

Download:

📄 Datasheet

Description:

2m x 32bit x 4 banks mobile sdram in 90fbga. The K4M56323LE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated wit

K4M56323LE Application

• Applications DataShee ORDERING INFORMATION Part No. K4M56323LE-M(E)E/N/S/C/L/R80 K4M56323LE-M(E)E/N/S/C/L/R1H K4M56323LE-M(E)E/N/S/C/L/R1L DataS

TAGS

K4M56323LE

Samsung semiconductor

📁 Related Datasheet

K4M563233D - 8Mx32 Mobile SDRAM 90FBGA (Samsung)
K4M563233D-M(E)E/N/I/P CMOS SDRAM 8Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.1 December 2002 Rev. 1.1 Dec. 2002 K4M56.

K4M563233E - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)
.. K4M563233E - M(E)E/N/G/C/L/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible.

K4M563233G - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA (Samsung semiconductor)
.. K4M563233G - F(H)N/G/L/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible wit.

K4M56323PG-C - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4M56323PG-F(H)E/G/C/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS patible with multiplexed address. • Four .

K4M56323PG-F - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4M56323PG-F(H)E/G/C/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS patible with multiplexed address. • Four .

K4M56323PG-FE - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4M56323PG-F(H)E/G/C/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS patible with multiplexed address. • Four .

K4M56323PG-G - 2M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4M56323PG-F(H)E/G/C/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS patible with multiplexed address. • Four .

K4M561633G - 4M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4M561633G - R(B)N/G/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address.

K4M56163LG - 2M x 16Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
.. K4M56163LG - R(B)N/G/L/F 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 2.5V power supply. • LVCMOS patible with multi.

K4M56163PE-F1L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M56163PE - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS patible with multiplexed address. • Four ba.