K4M56323LE Datasheet - Samsung semiconductor

K4M56323LE 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

The K4M56323LE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4M56323LE Features

* 2.5V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle with ad

K4M56323LE_Samsungsemiconductor.pdf