K4M563233E 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Samsung semiconductor

Description

www.DataSheet4U.com K4M563233E - M(E)E/N/G/C/L/F 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4M563233E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high.

📥 Download Datasheet

K4M563233E Datasheet Preview — Preview of K4M563233E PDF

Datasheet Specifications

Part number: K4M563233E
Manufacturer: Samsung semiconductor
File Size: 364.92 KB
Datasheet: K4M563233E_Samsungsemiconductor.pdf
Description: 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Features

* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle

Applications

* e DataShe ORDERING INFORMATION Part No. K4M563233E-M(E)E/N/G/C/L/F75 K4M563233E-M(E)E/N/G/C/L/F80 K4M563233E-M(E)E/N/G/C/L/F1H K4M563233E-M(E)E/N/G/C/L/F1L DataSheet4U. com Max Freq. 133MHz(CL=3) 125MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)
* 1 LVCMOS 90 FBGA Leaded (Lead Free) Interface Package - M

K4M563233E Distributors

📁 Related Datasheet

K4M563233D K4M56163PE-F1L K4M56163PE-F90 K4M56163PE-R K4M56163PE-RG K4M511533E

📌 All Tags

K4M563233E 32Bit Banks Mobile SDRAM 90FBGA Samsung semiconductor

Samsung semiconductor K4M563233E-like datasheet