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K4M563233E - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Samsung semiconductor

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Datasheet Details

Part number: K4M563233E
Manufacturer: Samsung semiconductor
File Size: 364.92 KB
Datasheet: K4M563233E_Samsungsemiconductor.pdf
Description: 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M563233E Product details

Description

The K4M563233E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR.

K4M563233E Stock/Price

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32Bit Banks Mobile SDRAM 90FBGA Samsung semiconductor

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