K4M56163PE-R 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Samsung

Description

K4M56163PE - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4M56163PE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high.

📥 Download Datasheet

K4M56163PE-R Datasheet Preview — Preview of K4M56163PE-R PDF

Datasheet Specifications

Part number: K4M56163PE-R
Manufacturer: Samsung
File Size: 112.60 KB
Datasheet: K4M56163PE-R_Samsungsemiconductor.pdf
Description: 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Features

* 1.8V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad

Applications

* ORDERING INFORMATION Part No. K4M56163PE-R(B)G/F90 K4M56163PE-R(B)G/F1L Max Freq. 111MHz(CL=3), 83MHz(CL=2) 105MHz(CL=3), 66MHz(CL=2)
* 1 Interface LVCMOS Package 54 FBGA Leaded (Lead Free) - R(B)G : Low Power, Extended Temperature(-25°C ~ 85°C) - R(B)F : Low Power, Commercial Temperature(-25°C

K4M56163PE-R Distributors

📁 Related Datasheet

K4M56163PG K4M561633G K4M56163LG K4M563233E K4M563233G K4M56323LE

📌 All Tags

K4M56163PE-R 16Bit Banks Mobile SDRAM 54FBGA Samsung

Samsung K4M56163PE-R-like datasheet