Part number:
K4M56163PG
Manufacturer:
Samsung semiconductor
File Size:
141.73 KB
Description:
4m x 16bit x 4 banks mobile sdram.
K4M56163PG_Samsungsemiconductor.pdf
Datasheet Details
Part number:
K4M56163PG
Manufacturer:
Samsung semiconductor
File Size:
141.73 KB
Description:
4m x 16bit x 4 banks mobile sdram.
K4M56163PG, 4M x 16Bit x 4 Banks Mobile SDRAM
The K4M56163PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c
K4M56163PG Features
* 1.8V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad
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