K4M56163LG Datasheet - Samsung semiconductor

K4M56163LG, 2M x 16Bit x 4 Banks Mobile SDRAM

www.DataSheet4U.com K4M56163LG - R(B)N/G/L/F 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA .
The K4M56163LG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high.

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K4M56163LG_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K4M56163LG

Manufacturer:

Samsung semiconductor

File Size:

139.94 KB

Description:

2M x 16Bit x 4 Banks Mobile SDRAM

Features

* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle with ad

Applications

* ORDERING INFORMATION Part No. K4M56163LG-R(B)N/G/L/F75 K4M56163LG-R(B)N/G/L//F1H K4M56163LG-R(B)N/G/L/F1L Max Freq. 133MHz(CL3), 111MHz(CL2) 111MHz(CL2) 111MHz(CL=3)
* 1, 83MHz(CL2) LVCMOS 54 FBGA Pb (Pb Free) Interface Package - R(B)N/G : Low Power, Extended Temperature(-25°C ~ 85°C) - R(B)L/F

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K4M56163LG 16Bit Banks Mobile SDRAM Samsung semiconductor

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