K4M56163LG Datasheet, Sdram, Samsung semiconductor

K4M56163LG Features

• Sdram
• 2.5V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS latency (1, 2 &

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Part number:

K4M56163LG

Manufacturer:

Samsung semiconductor

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139.94kb

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📄 Datasheet

Description:

2m x 16bit x 4 banks mobile sdram. The K4M56163LG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated wit

K4M56163LG Application

• Applications ORDERING INFORMATION Part No. K4M56163LG-R(B)N/G/L/F75 K4M56163LG-R(B)N/G/L//F1H K4M56163LG-R(B)N/G/L/F1L Max Freq. 133MHz(CL3), 111M

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K4M56163LG

Samsung semiconductor

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